Royal Society of Chemistry, Journal of Materials Chemistry A: materials for energy and sustainability, 38(11), p. 20592-20600, 2023
DOI: 10.1039/d3ta03697a
Full text: Unavailable
The shallow VZn acceptors are proposed as the source for p-type doping in the Zn3P2 solar absorber. Not only VZn but also deep-level defects PZn and Pi have increased concentrations in non-stoichiometric, P-rich Zn3P2.