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Published in

Nanoscale Advances, 11(3), p. 3100-3106, 2021

DOI: 10.1039/d0na01026j

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Theoretical study of the influence of doped oxygen group elements on the properties of organic semiconductors

Journal article published in 2021 by Anmin Liu ORCID, Mengfan Gao, Yan Ma, Xuefeng Ren ORCID, Liguo Gao ORCID, Yanqiang Li ORCID, Tingli Ma ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Doping oxygen group elements on the properties of organic semiconductor were studied by DFT; the doping of multi-element Te has high stability and mobility; provide guidance for preparing high-performance organic semiconductor materials.