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Royal Society of Chemistry, Journal of Materials Chemistry A: materials for energy and sustainability, 8(10), p. 4355-4365, 2022

DOI: 10.1039/d1ta09620f

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Relevance of Ge incorporation to control the physical behaviour of point defects in kesterite

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Ge-containing kesterites for PV applications demonstrated their effectiveness in improving the cell VOC. The physical behaviour of defects is found to be a key mechanism, with the GeZn antisite appearing less detrimental than its SnZn counterpart.