Published in
Royal Society of Chemistry, Physical Chemistry Chemical Physics, 10(23), p. 5975-5983, 2021
DOI: 10.1039/d0cp06239a
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Multilevel oxygen-vacancy conductive filaments in β-Ga2O3 based resistive random access memory
Journal article published in 2021 by
Jie Hou,
Rui Guo,
Jie Su 
,
Yawei Du,
Zhenhua Lin,
Jincheng Zhang,
Yue Hao,
Jingjing Chang
,
Yawei Du,
Zhenhua Lin,
Jincheng Zhang,
Yue Hao,
Jingjing Chang
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Abstract
In this study, at least three kinds of VOs and conductive filaments with low resistance states and forming and set voltages are found for β-Ga2O3 memory. This suggests the great potential of β-Ga2O3 memory for multilevel storage application.