Published in

Royal Society of Chemistry, Journal of Materials Chemistry, 19(22), p. 9458, 2012

DOI: 10.1039/c2jm30893b

Links

Tools

Export citation

Search in Google Scholar

Solution-processed small molecule transistors with low operating voltages and high grain-boundary anisotropy

This paper is available in a repository.
This paper is available in a repository.

Full text: Download

Green circle
Preprint: archiving allowed
Orange circle
Postprint: archiving restricted
Red circle
Published version: archiving forbidden
Data provided by SHERPA/RoMEO

Abstract

We present a new soluble pentacene derivative with ethyl substitutions in the 1,13,14,22 backbone positions to modulate the solubility and film forming properties of this material compared to triisopropylsilylethynyl (TIPS) pentacene. This permits reproducible production of molecularly highly ordered structures that feature average transistor mobilities in excess of 1 cm2 V−1 s−1 depending on crystal orientation by careful selection of casting conditions.