Published in

Royal Society of Chemistry, CrystEngComm, 7(23), p. 1628-1633, 2021

DOI: 10.1039/d0ce01572e

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Highly-crystalline 6 inch free-standing GaN observed using X-ray diffraction topography

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

We demonstrate the crystal quality of a 6 inch (0001) plane free-standing GaN substrate grown using a Na-flux based liquid phase epitaxy method.