Published in
Royal Society of Chemistry, CrystEngComm, 7(23), p. 1566-1571, 2021
DOI: 10.1039/d0ce01613f
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Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations
Journal article published in 2021 by
Andrey Sarikov 
,
Anna Marzegalli ,
Luca Barbisan ,
Massimo Zimbone ,
Corrado Bongiorno,
Marco Mauceri,
Danilo Crippa,
Francesco La Via ,
Leo Miglio
,
Anna Marzegalli ,
Luca Barbisan ,
Massimo Zimbone ,
Corrado Bongiorno,
Marco Mauceri,
Danilo Crippa,
Francesco La Via ,
Leo Miglio
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Abstract
Stacking fault annihilation mechanism in 3C-SiC epitaxially grown on Si(001) is studied by molecular dynamics simulations and its implications for improvement of 3C-SiC characteristics are provided.