Published in
Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 1(9), p. 199-207, 2021
DOI: 10.1039/d0tc04642f
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Single nanoflake-based PtSe2 p-n junction (in-plane) formed by optical excitation of point defects in BN for ultrafast switching photodiodes
Journal article published in 2020 by
Sikandar Aftab,
Ms Samiya,
Hafiz Mansoor Ul Haq,
Muhammad Waqas Iqbal,
Muhammad Hussain,
Saqlain Yousuf,
Saqlain Yousaf,
Atteq Ur Rehman,
Muhammad Usman Khan,
Zaheer Ahmed,
Muhammad Zahir Iqbal 
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Abstract
Here, novel lateral PtSe2 p–n junctions are fabricated based on the PtSe2/BN/graphene (Gr) van der Waals heterostructures upon the illumination of visible light via the optical excitation of the mid-gap point defects in hexagonal boron nitride (h-BN).