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Institute of Electrical and Electronics Engineers, IEEE Electron Device Letters, 1(42), p. 38-41, 2021

DOI: 10.1109/led.2020.3037640

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Trap-Induced Data-Retention-Time Degradation of DRAM and Improvement Using Dual Work-Function Metal Gate

Journal article published in 2020 by Kyoung Yeon Kim ORCID, Kyung Kyu Min ORCID, Byung-Gook Park ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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