Published in
Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 47(8), p. 17065-17073, 2020
DOI: 10.1039/d0tc03942j
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Gamma-ray Irradiation Induced Oxidation and Disproportionation at the amorphous SiO2/Si Interfaces
Journal article published in 2020 by
Dechao Meng 
,
Mu Lan ,
Zeng-Hui Yang,
Shouliang Hu,
Guanghui Zhang,
Chuanhui Liang,
Haoran Zhan,
Jiang Liu ,
Ming Li,
Hang Zhou,
Xu Zuo ,
Yu Song ,
Su-Huai Wei
,
Mu Lan ,
Zeng-Hui Yang,
Shouliang Hu,
Guanghui Zhang,
Chuanhui Liang,
Haoran Zhan,
Jiang Liu ,
Ming Li,
Hang Zhou,
Xu Zuo ,
Yu Song ,
Su-Huai Wei
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Abstract
Distinct interfacial structure changes, including oxidation and disproportionation, have been found to be the main response to the Mrad dose gamma ray irradiation for SiO2/Si films.