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Royal Society of Chemistry, Nanoscale, 35(12), p. 18356-18362, 2020

DOI: 10.1039/d0nr04120c

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Reduction of the ambient effect in multilayer InSe transistors and a strategy toward stable 2D-based optoelectronic applications

Journal article published in 2020 by Yanhao Wang, Jianwei Gao, Bin Wei, Yingkuan Han, Chao Wang, Yakun Gao, Hong Liu ORCID, Lin Han ORCID, Yu Zhang
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Both positive and negative photoconductivities are observed in InSe FETs for the first time, and a physical mechanism is proposed.