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Royal Society of Chemistry, Nanoscale, 37(12), p. 19259-19266, 2020

DOI: 10.1039/d0nr04338a

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Visible to Near-Infrared Photodetector with Novel Optoelectronic Performance Based on Graphene/S-doped InSe Heterostructure on h-BN Substrate

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

We demonstrate a graphene/S-doped InSe heterostructure with preeminent photoresponse performance and broadband photodetection. Remarkably, the devices exhibit uniformly positive photocurrent when the polarity of the gate voltage is adjusted.