Published in
Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 37(8), p. 13033-13039, 2020
DOI: 10.1039/d0tc02866e
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High Growth Rate and High Wet Etch Resistance Silicon Nitride Grown by Low Temperature Plasma Enhanced Atomic Layer Deposition with a Novel Silylamine Precursor
Journal article published in 2020 by
Harrison Sejoon Kim 
,
Su Min Hwang,
Xin Meng ,
Young-Chul Byun,
Yong Chan Jung,
Arul Vigneswar Ravichandran,
Akshay Sahota ,
Si Joon Kim ,
Jin Ho Ahn,
Lance Lee,
Xiaobing Zhou,
Byung Keun Hwang,
Jiyoung Kim
,
Su Min Hwang,
Xin Meng ,
Young-Chul Byun,
Yong Chan Jung,
Arul Vigneswar Ravichandran,
Akshay Sahota ,
Si Joon Kim ,
Jin Ho Ahn,
Lance Lee,
Xiaobing Zhou,
Byung Keun Hwang,
Jiyoung Kim
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Abstract
Trisilylamine homolog, tris(disilanyl)amine (TDSA), is introduced as a novel precursor for the deposition of highly etch resistant silicon nitride thin films having a high growth rate at a low temperature (<300 °C) using plasma enhanced ALD process.