Published in
Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 25(8), p. 8380-8392, 2020
DOI: 10.1039/d0tc00909a
Links
Tools
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach
Journal article published in 2020 by
Emilio Scalise 
,
Luca Barbisan ,
Andrey Sarikov ,
Francesco Montalenti ,
Leo Miglio ,
Anna Marzegalli
,
Luca Barbisan ,
Andrey Sarikov ,
Francesco Montalenti ,
Leo Miglio ,
Anna Marzegalli
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Published version:
archiving forbidden
Data provided by 
Abstract
Dislocation complexes are identified as killer defects in 3C-SiC/Si(001) by a synergistic approach of molecular dynamics and ab initio simulations.