Published in
American Institute of Physics, Journal of Vacuum Science and Technology B, 3(38), p. 032214, 2020
DOI: 10.1116/6.0000052
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Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire
Journal article published in 2020 by
David F. Storm 
,
Tyler A. Growden ,
Evan M. Cornuelle ,
Prudhvi R. Peri ,
Thomas Osadchy,
Jeffrey W. Daulton ,
Wei-Dong Zhang,
D. Scott Katzer ,
Matthew T. Hardy ,
Neeraj Nepal ,
Richard Molnar,
Elliott R. Brown,
Paul R. Berger ,
David J. Smith,
David J. Meyer
,
Tyler A. Growden ,
Evan M. Cornuelle ,
Prudhvi R. Peri ,
Thomas Osadchy,
Jeffrey W. Daulton ,
Wei-Dong Zhang,
D. Scott Katzer ,
Matthew T. Hardy ,
Neeraj Nepal ,
Richard Molnar,
Elliott R. Brown,
Paul R. Berger ,
David J. Smith,
David J. Meyer
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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