Published in

Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 16(8), p. 5572-5579, 2020

DOI: 10.1039/d0tc00661k

Links

Tools

Export citation

Search in Google Scholar

Synergistic effects of charge transport engineering and passivation enabling efficient inverted perovskite quantum-dot light-emitting diodes

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

Full text: Unavailable

Green circle
Preprint: archiving allowed
Orange circle
Postprint: archiving restricted
Red circle
Published version: archiving forbidden
Data provided by SHERPA/RoMEO

Abstract

A synergistic engineering strategy of improved charge transport and facile post-passivation enhances the performance of inverted perovskite QD light-emitting diodes.