Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 15(8), p. 5163-5173, 2020
DOI: 10.1039/c9tc06210f
Full text: Unavailable
Oxygen incorporated solution-processed high-κ La2O3 dielectrics exhibit large-area uniformity, low leakage and high breakdown field comparable with ALD deposited films.