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Inorganic Chemistry Frontiers, 7(7), p. 1564-1572, 2020

DOI: 10.1039/c9qi01574d

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Additive-assisted synthesis and optoelectronic properties of (CH3NH3)4Bi6I22

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

A novel iodobismuthate semiconductor (MA)4Bi6I22 (measured bandgap of 1.9 eV) was prepared using solution methods in the presence of HgI2 additive.