Inorganic Chemistry Frontiers, 7(7), p. 1564-1572, 2020
DOI: 10.1039/c9qi01574d
Full text: Unavailable
A novel iodobismuthate semiconductor (MA)4Bi6I22 (measured bandgap of 1.9 eV) was prepared using solution methods in the presence of HgI2 additive.