Published in
Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 6(8), p. 1972-1980, 2020
DOI: 10.1039/c9tc05759e
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Interface modification of sputtered NiOx as the hole-transporting layer for efficient inverted planar perovskite solar cells
Journal article published in 2020 by
Xiaolu Zheng,
Zhaoning Song 
,
Zhiliang Chen,
Sandip Singh Bista,
Pengbin Gui,
Niraj Shrestha,
Cong Chen,
Chongwen Li,
Xinxing Yin,
Rasha A. Awni,
Hongwei Lei,
Chen Tao ,
Randy J. Ellingson ,
Yanfa Yan ,
Guojia Fang
,
Zhiliang Chen,
Sandip Singh Bista,
Pengbin Gui,
Niraj Shrestha,
Cong Chen,
Chongwen Li,
Xinxing Yin,
Rasha A. Awni,
Hongwei Lei,
Chen Tao ,
Randy J. Ellingson ,
Yanfa Yan ,
Guojia Fang
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Abstract
An appropriately combined triple interface modification, i.e., post-annealing, O2-plasma, and KCl treatments, is employed to ameliorate the optoelectronic properties of sputtered NiOx films and achieve better device performance.