Published in
Royal Society of Chemistry, Journal of Materials Chemistry A: materials for energy and sustainability, 3(8), p. 1273-1278, 2020
DOI: 10.1039/c9ta11424f
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Combined treatment of phonon scattering by electrons and point defects explains the thermal conductivity reduction in highly-doped Si
Journal article published in 2020 by
Bonny Dongre 
,
Jesús Carrete ,
Shihao Wen ,
Jinlong Ma ,
Wu Li,
Natalio Mingo ,
Georg K. H. Madsen
,
Jesús Carrete ,
Shihao Wen ,
Jinlong Ma ,
Wu Li,
Natalio Mingo ,
Georg K. H. Madsen
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Abstract
Successful prediction of thermal conductivity of highly-doped Si, revealing the importance of phonon scattering by electrons as well as point defects.