Published in
Royal Society of Chemistry, Physical Chemistry Chemical Physics, 3(22), p. 1591-1597, 2020
DOI: 10.1039/c9cp05050g
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Impact of hydrogen dopant incorporation on InGaZnO, ZnO and In2O3 thin film transistors
Journal article published in 2020 by
Huiru Wang 
,
Jiawei He,
Yongye Xu,
Nicolas André ,
Yun Zeng,
Denis Flandre ,
Lei Liao,
Guoli Li
,
Jiawei He,
Yongye Xu,
Nicolas André ,
Yun Zeng,
Denis Flandre ,
Lei Liao,
Guoli Li
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Abstract
Hydrogen (H) dopants’ role and active defects inside n-type metal oxide semiconductors (MOXs) are comprehensively studied via continuous H plasma treatment.