Published in

Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 1(8), p. 165-172, 2020

DOI: 10.1039/c9tc04982g

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Fabrication of indium gallium zinc oxide phototransistors via oxide-mesh insertion for visible light detection

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Visible light detection of oxide phototransistors via insertion of an oxide-mesh inside the channel creating oxygen vacancies that increase subgap states.