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Published in

Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 37(7), p. 11473-11482, 2019

DOI: 10.1039/c9tc03507a

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Electron and hole trapping in Eu- or Eu,Hf-doped LuPO4 and YPO4 tracked by EPR and TSL spectroscopy

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Data provided by SHERPA/RoMEO

Abstract

EPR spectroscopy in X- and Q-bands was employed to trace charge carrier trapping upon exposure to X-rays of LuPO4:Eu, LuPO4:Eu,Hf and YPO4:Eu,Hf flux-grown single crystals, as well as LuPO4:Eu sintered ceramics.