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Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 34(7), p. 10491-10497, 2019

DOI: 10.1039/c9tc03048d

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Strain and electric field modulated electronic structure of two-dimensional SiP(SiAs)/GeS van der Waals heterostructures

Journal article published in 2019 by Yingmei Zhu, Xiaocha Wang ORCID, Wenbo Mi ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Type-II alignment appears in the SiP(SiAs)/GeS heterostructures, which can be tuned by strain and an electric field.