Physical mechanisms involved in the formation and operation of memory devices based on a monolayer of gold nanoparticle-polythiophene hybrid materials
Journal article published in 2019 by
T. Zhang,
D. Guérin 
,
F. Alibart,
D. Troadec,
D. Hourlier,
G. Patriarche ,
A. Yassin ,
M. Oçafrain,
P. Blanchard ,
J. Roncali ,
D. Vuillaume ,
K. Lmimouni,
S. Lenfant
,
F. Alibart,
D. Troadec,
D. Hourlier,
G. Patriarche ,
A. Yassin ,
M. Oçafrain,
P. Blanchard ,
J. Roncali ,
D. Vuillaume ,
K. Lmimouni,
S. Lenfant
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Published version:
archiving forbidden
Data provided by 
Abstract
Understanding the physical and chemical mechanisms occurring during the forming process and operation of an organic resistive memory device is a requisite for better performance.