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Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 18(7), p. 5307-5313, 2019

DOI: 10.1039/c9tc01152h

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Deprotonation and vacancies at the CH3NH3PbI3/ZnO and CH3NH3PbI3/GaN interfaces, detected in their theoretical XANES

Journal article published in 2019 by Małgorzata Wierzbowska ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Fingerprints of dehydrogenation and atomic vacancies at the MAPbI3/ZnO and MAPbI3/GaN interfaces in their theoretical XANES.