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Royal Society of Chemistry, RSC Advances, 21(9), p. 11996-12000, 2019

DOI: 10.1039/c9ra01520e

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Interfacial electronic structure between a W-doped In2O3 transparent electrode and a V2O5 hole injection layer for inorganic quantum-dot light-emitting diodes

Journal article published in 2019 by Su Been Heo, Jong Hun Yu, Minju Kim, Yeonjin Yi, Ji-Eun Lee, Han-Ki Kim ORCID, Seong Jun Kang ORCID
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

Interfacial electronic structure between W-doped In2O3 and V2O5 has been investigated, and we found gap states that can provide an efficient hole carrier injection pathway.