Published in

Royal Society of Chemistry, Energy & Environmental Science, 4(12), p. 1396-1403, 2019

DOI: 10.1039/c9ee00317g

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Medium-temperature thermoelectric GeTe: vacancy suppression and band structure engineering leading to high performance

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Achieving high electronic mobility and excellent thermoelectric performance in GeTe through Ge vacancy suppression and band structure engineering.