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Royal Society of Chemistry, Physical Chemistry Chemical Physics, 14(21), p. 7518-7523, 2019

DOI: 10.1039/c9cp00033j

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Electronic transport properties and magnetoresistance in the Fe3O4/SiO2/p-Si heterostructure with an in-plane current geometry

Journal article published in 2019 by Xiang Liu, Wenbo Mi ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Spin-dependent transport of electrons in p-Si amplifies the MR of the heterostructure due to spin extraction from Fe3O4 below 190 K.