Published in
Royal Society of Chemistry, CrystEngComm, 14(21), p. 2281-2285, 2019
DOI: 10.1039/c8ce01906a
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Lattice-plane bending angle modulation of Mg-doped GaN homoepitaxial layer observed by X-ray diffraction topography
Journal article published in 2019 by
Jaemyung Kim,
Okkyun Seo 
,
Chulho Song ,
Satoshi Hiroi,
Yanna Chen ,
Yoshihiro Irokawa,
Toshihide Nabatame,
Yasuo Koide,
Osami Sakata
,
Chulho Song ,
Satoshi Hiroi,
Yanna Chen ,
Yoshihiro Irokawa,
Toshihide Nabatame,
Yasuo Koide,
Osami Sakata
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Abstract
We have studied the lattice-plane modulation of Mg-doped GaN homoepitaxial layers by X-ray diffraction topography.