Published in
Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 7(7), p. 1913-1918, 2019
DOI: 10.1039/c8tc05932b
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A flexible memory with low-voltage and high-operation speed using an Al2O3/poly(α-methylstyrene) gate stack on a muscovite substrate
Journal article published in 2019 by
Huixin He,
Waner He,
Jiaying Mai,
Jiali Wang,
Zhengmiao Zou,
Dao Wang,
Jiajun Feng,
Aihua Zhang,
Zhen Fan 
,
Sujuan Wu,
Min Zeng,
Jinwei Gao ,
Guofu Zhou,
Xubing Lu ,
J.-M. Liu
,
Sujuan Wu,
Min Zeng,
Jinwei Gao ,
Guofu Zhou,
Xubing Lu ,
J.-M. Liu
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Abstract
A clear technical demonstration of the critical role of the blocking layers, which has never been addressed sufficiently in previous work.