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Royal Society of Chemistry, Physical Chemistry Chemical Physics, 5(21), p. 2619-2627, 2019

DOI: 10.1039/c8cp07298a

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Achieving a direct band gap and high power conversion efficiency in an SbI3/BiI3 type-II vdW heterostructure via interlayer compression and electric field application

Journal article published in 2019 by Kang Lai, Hongxing Li, Yuan-Kai Xu, Wei-Bing Zhang ORCID, Jiayu Dai ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Interlayer compression and vertical electric field application improve the electronic and photovoltaic properties of type-II vdW heterostructures with an indirect gap.