Published in
Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 4(7), p. 843-852, 2019
DOI: 10.1039/c8tc05188g
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A solution processed metal–oxo cluster for rewritable resistive memory devices
Journal article published in 2019 by
Kui Zhou,
Guanglong Ding,
Chen Zhang,
Ziyu Lv 
,
Shenghuang Luo,
Ye Zhou ,
Li Zhou,
Xiaoli Chen,
Huilin Li,
Su-Ting Han
,
Shenghuang Luo,
Ye Zhou ,
Li Zhou,
Xiaoli Chen,
Huilin Li,
Su-Ting Han
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Abstract
A memory device based on metal–oxo cluster-assembled materials demonstrates a redox-based resistive switching behaviour which is correlated with the migration of hydroxide ions with low activation energy.