Published in
Royal Society of Chemistry, Nanoscale, 1(11), p. 193-199, 2019
DOI: 10.1039/c8nr05863f
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Localization and transient emission properties in InGaN/GaN quantum wells of different polarities within core–shell nanorods
Journal article published in 2019 by
Y. Robin 
,
E. A. Evropeitsev,
T. V. Shubina,
D. A. Kirilenko,
V. Y.-U. Davydov,
A. N. Smirnov,
A. A. Toropov ,
I. A. Eliseyev ,
S. Y. Bae,
M. Kushimoto,
S. Nitta,
S. V. Ivanov,
H. Amano
,
E. A. Evropeitsev,
T. V. Shubina,
D. A. Kirilenko,
V. Y.-U. Davydov,
A. N. Smirnov,
A. A. Toropov ,
I. A. Eliseyev ,
S. Y. Bae,
M. Kushimoto,
S. Nitta,
S. V. Ivanov,
H. Amano
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Abstract
Transient photoluminescence (PL) characteristics and localization phenomena in InGaN/GaN core–shell nanorods (NRs) were investigated from 6 K up to 285 K.