Published in
Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 48(6), p. 13359-13366, 2018
DOI: 10.1039/c8tc02634c
Links
Tools
Cross-linked poly(hydroxy imide) gate-insulating materials for low-temperature processing of organic thin-film transistors
Journal article published in 2018 by
Joo-Young Kim 
,
Ji Whan Kim ,
Eun Kyung Lee ,
Jeong-Il Park,
Bang-Lin Lee,
Young-Nam Kwon,
Sunjung Byun,
Myung-Sup Jung,
Jang-Joo Kim
,
Ji Whan Kim ,
Eun Kyung Lee ,
Jeong-Il Park,
Bang-Lin Lee,
Young-Nam Kwon,
Sunjung Byun,
Myung-Sup Jung,
Jang-Joo Kim
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Published version:
archiving forbidden
Data provided by 
Abstract
This paper reports a polymeric gate insulating material of poly(hydroxy imide) cured at the low temperature of 130 °C for the application to organic thin-film transistors on plastic substrates exhibiting high breakdown voltage and no hysteresis.