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Royal Society of Chemistry, Nanoscale

DOI: 10.1039/c8nr06163g

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Sub-kT/q switching in In<sub>2</sub>O<sub>3</sub> nanowire negative capacitance field-effect transistors

Journal article published in 2018 by Meng Su, Xuming Zou ORCID, Youning Gong ORCID, Jianlu Wang, Yuan Liu, Johnny C. Ho ORCID, Xingqiang Liu ORCID, Lei Liao
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Nanowire based NC-FETs with SS values below 60 mV dec−1 are demonstrated. Short channel devices are fabricated using a self-alignment approach.