Published in
American Institute of Physics, Applied Physics Letters, 26(111), p. 262101
DOI: 10.1063/1.5007616
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Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency
Journal article published in 2017 by
C. Haller,
J.-F. Carlin,
G. Jacopin 
,
D. Martin,
R. Butté ,
N. Grandjean
,
D. Martin,
R. Butté ,
N. Grandjean
This paper was not found in any repository, but could be made available legally by the author.
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