Published in
Royal Society of Chemistry, Nanoscale, 25(9), p. 8586-8590
DOI: 10.1039/c7nr02305g
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Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode
Journal article published in 2017 by
Chih-Yang Lin,
Po-Hsun Chen 
,
Ting-Chang Chang ,
Kuan-Chang Chang,
Sheng-Dong Zhang,
Tsung-Ming Tsai,
Chih-Hung Pan,
Min-Chen Chen,
Yu-Ting Su,
Yi-Ting Tseng,
Yao-Feng Chang ,
Ying-Chen Chen,
Hui-Chun Huang,
Simon M. Sze
,
Ting-Chang Chang ,
Kuan-Chang Chang,
Sheng-Dong Zhang,
Tsung-Ming Tsai,
Chih-Hung Pan,
Min-Chen Chen,
Yu-Ting Su,
Yi-Ting Tseng,
Yao-Feng Chang ,
Ying-Chen Chen,
Hui-Chun Huang,
Simon M. Sze
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