Published in
Royal Society of Chemistry, Nanoscale, 36(10), p. 17080-17091
DOI: 10.1039/c8nr05787g
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Optimizing the yield of A-polar GaAs nanowires to achieve defect-free zinc blende structure and enhanced optical functionality
Journal article published in 2018 by
Mahdi Zamani,
Gözde Tütüncüoglu,
Sara Martí-Sánchez 
,
Luca Francaviglia ,
Lucas Güniat,
Lea Ghisalberti,
Heidi Potts ,
Martin Friedl,
Edoardo Markov,
Wonjong Kim,
Jean-Baptiste Leran,
Vladimir G. Dubrovskii,
Jordi Arbiol ,
Anna Fontcuberta i. Morral
,
Luca Francaviglia ,
Lucas Güniat,
Lea Ghisalberti,
Heidi Potts ,
Martin Friedl,
Edoardo Markov,
Wonjong Kim,
Jean-Baptiste Leran,
Vladimir G. Dubrovskii,
Jordi Arbiol ,
Anna Fontcuberta i. Morral
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Abstract
Compound semiconductors exhibit an intrinsic polarity, as a consequence of the ionicity of their bonds.