Published in
Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 32(6), p. 8738-8750
DOI: 10.1039/c8tc02423e
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Influence of growth kinetics on Sn incorporation in direct band gap Ge1−xSnx nanowires
Journal article published in 2018 by
Jessica Doherty,
Subhajit Biswas 
,
Dzianis Saladukha,
Quentin Ramasse,
Tara Shankar Bhattacharya,
Achintya Singha,
Tomasz J. Ochalski,
Justin D. Holmes
,
Dzianis Saladukha,
Quentin Ramasse,
Tara Shankar Bhattacharya,
Achintya Singha,
Tomasz J. Ochalski,
Justin D. Holmes
This paper is available in a repository.
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