Published in
Royal Society of Chemistry, Faraday Discussions, (213), p. 339-355, 2019
DOI: 10.1039/c8fd00126j
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Towards a 3D GeSbTe phase change memory with integrated selector by non-aqueous electrodeposition
Journal article published in 2019 by
Ruomeng Huang 
,
Gabriela P. Kissling ,
Reza Kashtiban,
Yasir J. Noori ,
Katarina Cicvarić,
Wenjian Zhang,
Andrew L. Hector ,
Richard Beanland,
David C. Smith,
Gillian Reid ,
Philip N. Bartlett ,
C. H. (Kees) de Groot
,
Gabriela P. Kissling ,
Reza Kashtiban,
Yasir J. Noori ,
Katarina Cicvarić,
Wenjian Zhang,
Andrew L. Hector ,
Richard Beanland,
David C. Smith,
Gillian Reid ,
Philip N. Bartlett ,
C. H. (Kees) de Groot
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Abstract
The design and fabrication of a 2D passive phase change memory matrix by non-aqueous electrodeposition of confined Ge–Sb–Te cells.