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Royal Society of Chemistry, Nanoscale, 1(10), p. 336-341

DOI: 10.1039/c7nr07586c

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Large scale 2D/3D hybrids based on gallium nitride and transition metal dichalcogenides

Journal article published in 2018 by Kehao Zhang ORCID, Bhakti Jariwala ORCID, Jun Li, Natalie C. Briggs, Baoming Wang ORCID, Dmitry Ruzmetov, Robert A. Burke, Jordan O. Lerach, Tony G. Ivanov, Md Haque ORCID, Randall M. Feenstra, Joshua A. Robinson
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Large area 2D MoS2 and WSe2 are integrated on 3D GaN by metal organic chemical vapor deposition (MOCVD). The thickness-dependent vertical tunneling and interlayer charge transfer is carefully studied. This work shows that few layer WSe2 film is the appropriate choice towards device application of synthetic 2D/3D heterostructures.