Published in
American Institute of Physics, Applied Physics Letters, 2(110), p. 021115
DOI: 10.1063/1.4973995
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GaN-based light emitting diodes using p-type trench structure for improving internal quantum efficiency
Journal article published in 2017 by
Garam Kim,
Min-Chul Sun,
Jang Hyun Kim,
Euyhwan Park,
Byung-Gook Park 
This paper was not found in any repository, but could be made available legally by the author.
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