Published in
Royal Society of Chemistry, Physical Chemistry Chemical Physics, 24(19), p. 15833-15841
DOI: 10.1039/c7cp01012e
Links
Tools
Growth of low doped monolayer graphene on SiC(0001) via sublimation at low argon pressure
Journal article published in 2017 by
Périne Landois 
,
Tianlin Wang,
Abir Nachawaty,
Maxime Bayle ,
Jean-Manuel Decams ,
Wilfried Desrat ,
Ahmed-Azmi Zahab,
Benoît Jouault,
Matthieu Paillet,
Sylvie Contreras
,
Tianlin Wang,
Abir Nachawaty,
Maxime Bayle ,
Jean-Manuel Decams ,
Wilfried Desrat ,
Ahmed-Azmi Zahab,
Benoît Jouault,
Matthieu Paillet,
Sylvie Contreras
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Published version:
archiving forbidden
Data provided by 
Abstract
Silicon carbide (SiC) sublimation is the most promising option to achieve transfer-free graphene at the wafer-scale.