Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 14(6), p. 3621-3627
DOI: 10.1039/c7tc05086k
Full text: Unavailable
We have investigated spin related processes in fullerene C60 devices using a several experimental techniques, which include magnetic field effect of photocurrent and electroluminescence in C60-based diodes; spin polarized carrier injection in C60-based spin-valves; and pure spin current generation in NiFe/C60/Pt trilayer devices.