Published in
Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 31(4), p. 7391-7396
DOI: 10.1039/c6tc01823h
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Current emission from P-doped SiC nanowires with ultralow turn-on fields
Journal article published in 2016 by
Shanliang Chen,
Minghui Shang 
,
Zuobao Yang,
Jinju Zheng,
Lin Wang,
Qiao Liu,
Fengmei Gao,
Weiyou Yang
,
Zuobao Yang,
Jinju Zheng,
Lin Wang,
Qiao Liu,
Fengmei Gao,
Weiyou Yang
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Abstract
We reported the current emission from P-doped SiC nanowires with an ultralow turn-on field of 0.47 V μm−1.