Published in
Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 23(6), p. 6187-6193
DOI: 10.1039/c8tc01762j
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A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature
Journal article published in 2018 by
Hyukjoon Yoo,
Young Jun Tak,
Won-Gi Kim,
Yeong-Gyu Kim,
Hyun Jae Kim 
This paper was not found in any repository, but could be made available legally by the author.
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Abstract
IGZO TFTs with an instant glue passivation layer exhibit improved electrical performance and stability due to the atomic diffusion effect.