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Published in

Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 18(5), p. 4426-4434

DOI: 10.1039/c7tc00562h

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Electric-field-induced widely tunable direct and indirect band gaps in hBN/MoS2 van der Waals heterostructures

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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