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Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 8(5), p. 2153-2159

DOI: 10.1039/c6tc04895a

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Localised nanoscale resistive switching in GaP thin films with low power consumption

Journal article published in 2017 by Fran Kurnia ORCID, Chunli Liu, Guangqing Liu, Rama K. Vasudevan, Sang Mo Yang, Sergei V. Kalinin, Nagarajan Valanoor ORCID, Judy N. Hart ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Resistive switching behaviour is observed for GaP thin films. Conductive AFM and FORC-IV measurements show that the current is localised at grain boundaries. The switching mechanism is driven by Ga migration along the grain boundaries.